MOF基Co3O4/SnO2异质结构气敏性能研究取得新进展

近年来，MOF基半导体材料以其大比表面积、多孔、及其独特的物理化学性质，吸引了广泛的技研究院（Korea Advanced Institute of Science and Technology (KAIST)）注意。其在气体吸附存储，催化，电化学传感器及能源领域有着重要的应用。近日，韩国高等科技研究所（Korea Advanced Institute of Science and Technology (KAIST)）的Il-Doo Kim团队，通过电化学置换法制备了制备了MOF基Co3O4/SnO2异质结构半导体，通过复合PdO纳米颗粒，成功制备了Co3O4−PdO loaded n-SnO2 HNCs。气敏性能测试结果显示，该材料对丙酮气体有极高的响应度(Rair/Rgas = 22.8 @ 5 ppm acetone, 90%RH)，这高于之前文献中报道的MOF基材料的响应度。其高气敏响应度可以归因于多孔中空的框架结构及p-n异质结构。

　　该研究成果给半导体气体传感器的发展带来新的机遇，题为“Metal Organic FrameworkTemplated Chemiresistor: Sensing Type Transition from P‑to‑N Using Hollow Metal Oxide Polyhedron via Galvanic Replacement”的论文发表在J. Am. Chem. Soc. 2017, 139, 11868−11876.

This work supported by the center forIntegrated Smart Sensors funded by Global Ph.D Fellowship Program through theNational Research Foundation of Korea (NRF) funded by the Ministry of Education(No. NRF- 2016H1A2A1907718), Wearable Platform Materials Technology Center (WMC)funded by National Research Foundation of Korea (NRF) Grant of the KoreanGovernment (MSIP) (No. 2016R1A5A1009926), and the NRF of Korea grant funded bythe Ministry of Science, ICT and Fugure Planning (NRF2015R1A2A1A16074901).This work was also supported by the Ministry of Science,ICT & FuturePlanning as Biomedical Treatment Technology Development Project(2015M3A9D7067418).